This paper introduces a compact NMOS-based temperature sensor designed for precise thermal management in high-performance integrated circuits. Fabricated using the TSMC 180 nm process with a 1.8 V supply, this sensor employs a single diode-connected NMOS transistor, achieving a significant size reduction and improved voltage headroom. The sensor’s area is 32 μm2 per unit, enabling dense integration around thermal hotspots. A novel voltage calibration method ensures accurate temperature extraction. The measurement results demonstrate three-sigma errors within ±0.1 ◦C in the critical range of 75 ◦C to 95 ◦C and +1.29/−1.08 ◦C outside this range, confirming the sensor’s high accuracy and suitability for advanced thermal management applications.
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